DRV-2 MOSFET Isolated Drive Module

Characteristics

• Single drive
• Input and output transformer isolation
• Low power
• All metal parallel seam sealing
• With status feedback function
• Small size and light weight
• Fast response

 

Main Technical Characteristics

Main Technical Parameters			Min	Typical	Max	Unit
Input	Input voltage		4.5	5	5.5	Vd.c.
	Control voltage			5		Vd.c.
	Power				0.12	W
	Control current			6	10	mA
	Response time				1	μs
Output	Output arrangement		1H
	Output voltage		9.5	11	13	Vd.c.
	Feedback voltage	ON		Low level		Vd.c.
		OFF		High level		Vd.c.
Other parameters	Insulation resistance		100			MΩ
	Dielectric withstand voltage				625	Vpk(a.c.)

 

Environmental parameters

Item	Min	Max	Unit
Operating temperature	-40	125	°C
Storage temperature	-55	125	°C
Shock	500, 1		(m/s2), ms
Vibration (high frequency)	30, 50~2000		(m/s2)2, Hz

 

Circuit Diagram

Component Parameters Function C1 0.1μF Matching capacitance D1 BAS21H Used for ON/OFF monitoring D2 MM3Z15V Prevent VGS from exceeding the allowable maximum value of MOSFET R1 10KΩ Driving pin pull-down resistor R2 10KΩ Adjust OFF time R3 10KΩ Adjust ON time R4 10KΩ Adjust the opening threshold

Take driving IRPF4368PBF as an example, the parameters of peripheral circuit components are selected as follows, turn-on time: 200μs, turn-off time: 100μ

 

Pin Description

No.	Pin	Function	No.	Pin	Function
1	IN	Drive control signal input	5	N_OUT	N channel output
2	GND	Power input “-”	6	JC	Detection signal output
3	ISO_GND	Isolated voltage output “-”	7	V+	Power input “+”
4	P_OUT	P channel output	8	Fbk	ON/OFF feedback output

 

ON/OFF State Table

Pin	IN	P_OUT	FBK	State description
1	L	L	H	MOSFET is not driven on
2	H	H	L	MOSFET drive on
3	L	L	L	Error (mistakenly ON)
4	H	H	H	Error (mistakenly OFF)

 

Dimensions (Unit: mm)	Working principle diagram and application instruction

 

Order mark

DRV-2	Y
Main code	Quality Grade